کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591796 1515605 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Significance of an external magnetic field on two-phonon processes in gated lateral semiconductor quantum dots
ترجمه فارسی عنوان
اهمیت یک میدان مغناطیسی خارجی بر روی فرآیند دو فونون در نقاط کوانتومی نیمه هادی جانبی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
چکیده انگلیسی


• Calculations of the electron–phonons in coupled quantum dots.
• Phonons described by deformation potential and piezoelectric interactions.
• Two phonon processes are studied.
• The electron scattering rate due to two phonon processes depends strongly on the external field.
• The results are interesting for designing and calculating the dynamic inside these devices.

Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong dependence of the scattering rate on the external magnetic field, lattice temperature and QDs separation distance is presented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 191, August 2014, Pages 10–13
نویسندگان
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