کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1591934 1515608 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The Kohn–Luttinger superconductivity in idealized doped graphene
ترجمه فارسی عنوان
ابررسانای کوهن لوتینگر در گرافن آلیاژ شده ایده آل
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
چکیده انگلیسی


• The Kohn–Luttinger superconductivity can be realized in an idealized graphene monolayer.
• The effect of the long-range Coulomb repulsion on superconductivity in graphene is studied.
• The electronic structure of graphene is described within the Shubin–Vonsowsky model.
• The superconducting phase diagram of graphene monolayer is constructed.
• The Kohn–Luttinger renormalizations and the long-range repulsion affect the superconductivity.

Idealized graphene monolayer is considered neglecting the van der Waals potential of the substrate and the role of the nonmagnetic impurities. The effect of the long-range Coulomb repulsion in an ensemble of Dirac fermions on the formation of the superconducting pairing in a monolayer is studied in the framework of the Kohn–Luttinger mechanism. The electronic structure of graphene is described in the strong coupling Wannier representation on the hexagonal lattice. We use the Shubin–Vonsowsky model which takes into account the intra- and intersite Coulomb repulsions of electrons. The Cooper instability is established by solving the Bethe–Salpeter integral equation, in which the role of the effective interaction is played by the renormalized scattering amplitude. The renormalized amplitude contains the Kohn–Luttinger polarization contributions up to and including the second-order terms in the Coulomb repulsion. We construct the superconductive phase diagram for the idealized graphene monolayer and show that the Kohn–Luttinger renormalizations and the intersite Coulomb repulsion significantly affect the interplay between the superconducting phases with ff-, d+idd+id-, and p+ipp+ip-wave symmetries of the order parameter.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 188, June 2014, Pages 61–66
نویسندگان
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