کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1593243 1515642 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effects of vacancy defects and nitrogen doping on the thermal conductivity of armchair (10, 10) single-wall carbon nanotubes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
The effects of vacancy defects and nitrogen doping on the thermal conductivity of armchair (10, 10) single-wall carbon nanotubes
چکیده انگلیسی

The influence of vacancy defects and nitrogen doping on the thermal conductivity of typical armchair (10, 10) single-walled carbon nanotubes is investigated using molecular dynamics (MD) simulation. The second-generation reactive empirical bond order potential and Tersoff potential are used to describe the interatomic interactions and the thermal conductivities are calculated using the Müller-Plathe approach (also called non-equilibrium MD simulation). Vacancy defects decrease the thermal conductivity whereas the substitution of nitrogen at vacancy sites improves the thermal conductivity. Quantum correction of the calculated results produces a thermal conductance temperature dependence that is in qualitative agreement with experimental data.


► Vacancy defects decrease the thermal conductivity.
► The substitution of nitrogen at vacancy sites improves the thermal conductivity.
► Thermal conductivity of CNTs with vacancy defects should be treated circumspectly.
► Quantum effects influence the thermal conductance at lower temperatures.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 151, Issues 14–15, July–August 2011, Pages 1004–1008
نویسندگان
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