کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594577 | 1515695 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferromagnetism and microstructure in Cr implanted p-type (100) silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
The magnetic properties and microstructure of p-type Si (100) implanted with 1.0Ã1015 cmâ2 of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67-0.75 emu/g in a wide temperature range are observed in the as-implanted sample. Annealing of the as-implanted sample modifies the microstructure and therefore weakens the magnetic exchange interaction. TEM observations show that the as-implanted silicon layer is amorphous. After annealing at temperature â¥800 âC, the SEM showed that the implanted profile layer became blurred and narrow, the ferromagnetism was weakened, which should have resulted from the re-crystallization of the implanted amorphous layer. These results were further compared with magnetic hysteresis observed in Mn-implanted silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 148, Issues 3â4, October 2008, Pages 122-125
Journal: Solid State Communications - Volume 148, Issues 3â4, October 2008, Pages 122-125
نویسندگان
L.J. Gao, L. Chow, R. Vanfleet, K. Jin, Z.H. Zhang, X.F. Duan, B. Xu, B.Y. Zhu, L.X. Cao, X.G. Qiu, B.R. Zhao,