کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1594737 | 1515674 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature N2-based passivation technique for porous silicon thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low temperature N2-based passivation technique for porous silicon thin films Low temperature N2-based passivation technique for porous silicon thin films](/preview/png/1594737.png)
چکیده انگلیسی
A technique is presented for the passivation of porous silicon (PS) thin films via nitrogen based annealing at the lowest temperature ever reported. Annealing freshly anodized PS thin films at temperatures as low as 520 Â âC under N2 flow in a rapid thermal annealer produces films that show no change in refractive index when exposed to ambient conditions over 60 days. These films also exhibited chemical resistance by surviving a brief dip in both concentrated KOH and buffered HF. Unlike most other PS surface passivation methods, this technique causes negligible reduction in refractive index of the annealed PS thin films. Passivation only occurs when dangling bonds and mono-hydrides populate the PS surface, providing a path for thermal interactions with the N2 gas.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 149, Issues 33â34, September 2009, Pages 1322-1325
Journal: Solid State Communications - Volume 149, Issues 33â34, September 2009, Pages 1322-1325
نویسندگان
T.D. James, A. Keating, G. Parish, C.A. Musca,