کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596024 | 1515719 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental study of ultra-sharp silicon nano-tips
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This paper presents two approaches on fabrication gated field emitter array from uniform single crystalline nano-tips. Investigation into electrical characterization of these silicon field emitters under an ultra high vacuum system is reported. Extensive experiment results were analyzed, in particular for the field emitter arrays with PECVD silicon dioxide as the insulating layer. Emission current fluctuation was significantly reduced after long time seasoning treatment. A low turn on voltage of 29 V was obtained. Emission current of 43.3 μA at a gate voltage of 92 V was available for a 10Ã10 field emitter array.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 143, Issues 11â12, September 2007, Pages 553-557
Journal: Solid State Communications - Volume 143, Issues 11â12, September 2007, Pages 553-557
نویسندگان
L. Chen,