کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1596911 | 1515731 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Critical point transitions of wurtzite indium nitride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5-20.0Â eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein-Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-established value of â¼1.2Â eV. With the aid of Adachi's dielectric function model for the vacuum ultraviolet reflection spectra and the empirical pseudopotential method approach for the electron band-structure, we are able to identify up to nine electronic transitions, showing clear picture for the critical point transitions in InN. The temperature dependence of these interband transitions has also been revealed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 137, Issues 1â2, January 2006, Pages 49-52
Journal: Solid State Communications - Volume 137, Issues 1â2, January 2006, Pages 49-52
نویسندگان
W.Z. Shen, X.D. Pu, J. Chen, H. Ogawa, Q.X. Guo,