کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1597188 | 1002941 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of magnetic field dependent mobility in ferromagnetic Ga1âxMnxAs layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
دانش مواد (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The magneto-transport properties of ferromagnetic Ga1âxMnxAs epilayers with Mn mole fractions in the range of xâ2.2-4.4% were investigated through Hall effect measurements. The magnetic field-dependent Hall mobility for a metallic sample with xâ2.2% in the temperature range of T=0-300Â K was analyzed by magnetic field-dependent mobility model including an activation energy of Mn acceptor level. This model provides outstanding fits to the measured data up to T=300Â K. It was found that the acceptor levels with activation energies of 112Â meV at B=0Â Oe decreased to 99Â meV at B=5Â kOe in the ferromagnetic region. The decrease in acceptor activation energy was due to the spin splitting of the Mn acceptor level in the ferromagnetic region, and was responsible for increase in carrier concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Communications - Volume 137, Issue 3, January 2006, Pages 171-176
Journal: Solid State Communications - Volume 137, Issue 3, January 2006, Pages 171-176
نویسندگان
I.T. Yoon, T.W. Kang, D.J. Kim,