کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1630486 | 1516670 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling uniaxial tensile deformation of polycrystalline Al using CPFEM
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The crystal plasticity finite element modeling (CPFEM) is realized in commercial finite element code ABAQUS with UMAT subroutine on the basis of the crystal plasticity theory of rate dependent polycrystal constitutive relations in the mesoscopic scale. The initial orientations obtained by electron backscatter diffraction (EBSD) are directly input into the CPFEM to simulate the mechanical response of polycrystalline 1050 pure Al in uniaxial tensile deformation. Two polycrystal models and two tensile strain rates were used in the simulations. The stress-strain curves of tensile deformation were analyzed. The predictions and the corresponding experiment result show reasonable agreement and slight deviation with experiments. The flow true stress of strain rate 0.01 sâ1 is higher than that of strain rate 0.001 sâ1. At the strain less than 0.05, the stress saturated rate of the experiment is higher than the simulated results. However, the stress saturated rate of the experiment becomes gentler than the corresponding simulated predictions at the strain over 0.05. Also, necking was simulated by the two models, but the necking strain is not well predicted. Tensile textures at strain 0.25 were predicted at the low strain rate of 0.001 sâ1. The predictions are in good accord with the experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 15, Issue 1, February 2008, Pages 43-47
Journal: Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material - Volume 15, Issue 1, February 2008, Pages 43-47
نویسندگان
Huachun Pi, Jingtao Han, Chuanguo Zhang, A. Kiet Tieu, Zhengyi Jiang,