10-Nanometer carbon nano tube field effect transistor based high celerity transposed polyphase decimation filter

In current trends Carbon Nano Tube Field Effect Transistor is considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. MOSFET scaling has faced serious limitations related to fabrication technology and device performances as the critical dimension goes down to sub-22 nm range.The limitations are electron tunneling through the thin insulator films, more power dissipation and short channel effects and also variations in doping concentration. These limitations can be overcome to some extent by modifying the channel material in the MOSFET structure with a single carbon nanotube. The high electron and hole mobility of carbon nano tubes with high k gate dielectrics, enhanced high performance nanoscale transistors.Filter is one of the major building blocks in DSP. The polyphase filters are very important component in the design of various filter structures. To evaluate the performance of high celerity transposed polyphase decimation filter using 10 nanometre CNTFET technologies.The results are obtained by analyzing average power, delay, and energy consumption.The CNTFET technology based filter design is analyzed and compared with CMOS technology based design.