Memristive Behavior of Nb/NbOx/Nb Structures Prepared by Local Anodic Oxidation1

Nb/NbOx/Nb planar structures were fabricated by tip-induced oxidation of Nb thin films. Electrical tests of the structures revealed their memristive behavior and indicated that besides drift of oxygen vacancies in the oxide barrier, also their diffusion should be essential. Consequent studies of surface potential by use of Kelvin probe force microscopy (KPFM) confirmed these indications and revealed the diffusion process at minute time-scale. Thus, the presented work brings an example of memristive device prepared by local anodic oxidation, showing that using this alternative technology approach could be an effective way how to prepare metal/insulator/metal type micro/nanoscale devices suitable for consequent advantageous scanning probe microscopy studies of in-barrier processes.