کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1630903 | 1006607 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electron Microscopy Study on the Influence of B-implantation on Ni Induced Lateral Crystallization in Amorphous Si1
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Nickel Metal Induced Lateral Crystallization (Ni-MILC) emerged as a viable technique for crystallization of a-Si films decreasing the crystallization temperature. Boron (B) implantation on a-Si films significantly enhances the crystallization rate of the Ni-MILC process. The structural characteristics of the implanted by Boron and subsequently crystallized by MILC a-Si films are studied by Transmission Electron Microscopy (TEM) and they are compared to intrinsic a-Si films which were deposited on top, as well as beside the boron implanted a-Si film. During the annealing, spontaneous nucleation occurs in the B-doped films far from the a-c interface, revealing a shorter incubation period in the B-doped films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Today: Proceedings - Volume 3, Issue 3, 2016, Pages 825-831
Journal: Materials Today: Proceedings - Volume 3, Issue 3, 2016, Pages 825-831