Binding Energy of a Magneto-exciton in an InAsP Quantum Well Wire for the Potential Application of Telecommunication Networks

Group III-V semiconductors, especially, InAs semiconducting material is considered to be an important material for the potential applications of telecommunication wavelength between 1.33 μm and 1.55 μm due to the narrow band gap in the near infrared region. Semiconductors composed of III–V materials having small effective masses, associated with the impurity, with larger sizes of any low dimensional semiconductors such as quantum well, quantum wire and quantum dot, are achievable. The binding energy of the impurity increases as the size of the confining region is of the order of the Bohr radius. In the present work, the magneto-exciton in an InAsP/InP quantum wire is investigated with the consideration of geometrical confinement. The exciton binding energy as a function of wire radius of the system is found in the presence of magnetic field strength. The binding energy of the magneto-exciton is obtained in the strong and weak confinement region and the results are compared with the other existing literature available. The optical, electrical and transport properties are found to enhance with the geometrical confinement effects with respect to bulk values due to their reduction of dimensionality of nano-heterostructures. The obtained results can be applied for the fibre optic communication and the telecommunication networks.