Optical Characteristics of Quantum Dot Transistor with Front Side Illumination

A study on the DC performance of Quantum Dot Transistor under illumination is presented. A device structure consist of Quantum Dots(QD) in the GaAs layer is considered for illumination. The photoconductive effect in the GaAs and QD layer which increases the 2DEG Channel electron concentration is considered. The I-V Characteristics of Quantum Dot Transistor, under dark and illumination condition have been calculated, plotted and discussed.