Capacitance–Voltage Characteristics of Selectively Doped CIAGS/Si Junctions

The capacitance-voltage measurements of Al and Ga doped CIAGS/ Si junctions grown by thermal evaporation were studied. The increase of built-in potential of junction with increase of Al and Ga concentration is observed. The free carrier concentration was found to decrease with increase in Al and Ga compositions. The transition of these films is found to be due to interface states.