Effect of Radiation on ZnTe/ Si Junction Using I–V and C–V Measurements

The electric parameters of Cu doped ZnTe/Si junction grown by thermal evaporation before and after irradiation have been investigated and presented in this article. Current–voltage (I–V) studies under forward and reverse bias at room temperature were carried out for this purpose. The higher values of ideality factor and series resistance were due to the generation-recombination of carriers in the space-charge region. This recombination current was caused by defects states. The current conduction mechanism was slightly altered by irradiation. Capacitance–voltage (C–V) characteristics measured at room temperature also identified the presence of defect levels in the device.