Effect of Channel Width on Breakdown Analysis of Normally-Off 4H-SiC Trenched and Implanted VJFET

The optimum channel width is necessary for high and stable breakdown voltage of normally off 4H-SiC based VJFET. The dependence of breakdown voltage on variation of channel width (0.8-0.9 μm) was studied using Sentaurus TCAD. The highest breakdown voltage was 2048 V reported at channel width of 0.8 μm. As channel width increases breakdown voltage decreases due to depletion region width decrease, whereas electric field and impact ionization decreases from gates towards drain with increase in channel width.