Thickness Dependent Optimization of 1-5 Phase of SmCo Thin Films Deposited by Pulsed Laser

In this work an effort has been made to deposit SmCo thin films on single crystal Si(100) substrates using pulsed laser deposition technique. The substrate temperature was fixed at 400 °C and number of laser pulses were varied in order to get thin films of different thicknesses. Effect of laser shots on the crystal structure evolution, composition of the deposited material and film thickness have been explored. A slight variation in the Sm and Co contents was observed in thin films grown by varying the number of laser shots, which ultimately resulted in the development of 1:5 phase of SmCo thin films.