کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1635299 | 1007021 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cu2ZnSnS4 thin films prepared by sulfurization of ion beam sputtered precursor and their electrical and optical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Cu2ZnSnS4(CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ï·cm and a high absorption coefficient as 1 à 104 cmâ1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 25, Issue 6, Supplement 1, October 2006, Pages 315-319
Journal: Rare Metals - Volume 25, Issue 6, Supplement 1, October 2006, Pages 315-319
نویسندگان
Jun ZHANG, Lexi SHAO, Yujun FU, Erqing XIE,