کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1635391 | 1007024 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Infrared studies of vacancy-oxygen-related complexes in electron-irradiated Czochralski-silicon
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The oxygen-related defects in CZ silicon during electron irradiation (1.5 MeV) and subsequent annealing in the range of 150-600 °C were investigated by means of FTIR. In the electron irradiation CZ-Si, vacancy-oxygen complex is one of the dominant defects and its concentration is proportional to electron dose but not related to oxygen concentration. In this work, it was focused on the identification of the weak band at 860 cmâ1 which was originated from asymmetrical stretching vibrations of an oxygen atom in the negative VO complex. It exhibits the same thermal stability with neutral VO band at 830 cmâ1. In addition, the intensity of 889 cmâ1 band has never been observed to exceed that of the A-center, implying that only a partial transformation of VO into VO2 does occur.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Rare Metals - Volume 25, Issue 6, Supplement 2, December 2006, Pages 55-58
Journal: Rare Metals - Volume 25, Issue 6, Supplement 2, December 2006, Pages 55-58
نویسندگان
Lili CAI, Hongjian CHEN, Yangxian LI, Guifeng CHEN, Xinghua LI, Jiangang HAO, Yu ZHANG,