Orientation control of SrRuO3 thin film on a Si substrate by chemical solution deposition for an electrode of lead zirconate titanate thin films

• a-axis oriented SrRuO3 layer was deposited on a Si substrate by wet process.
• a- and c-axis oriented Pb(Zr,Ti)O3 thin film was deposited on SrRuO3 electrode.
• The obtained electrical property was nearly identical to that of bulk material.

A strontium ruthenium oxide (SRO) electrode was deposited on a Si substrate using chemical solution deposition (CSD). For this study, the crystal orientation of the SRO electrode was controlled using a CSD-derived seeding layer deposited on a Si substrate. Thereby, SRO thin film with a-axis preferred orientation was obtained on the Si substrate. Furthermore, lead zirconate titanate (PZT) thin film with Zr/Ti=50/50 composition (PZT50) was deposited onto the a-axis oriented SRO layer. The deposited PZT thin film also exhibited preferred orientation in the direction of the a-axis and c  -axis. The estimated remanent polarization and the effective piezoelectric constant (d33eff) were, respectively, 20 μC/cm2 and 298 pm/V. These values were nearly equal to those of the reported bulk PZT of the same composition.