Structural and photovoltaic properties of FeSe2 films prepared by radio frequency magnetron sputtering

Thin films of iron diselenide (FeSe2) on single crystal silicon substrates Si (100) have been obtained by radio frequency magnetron sputtering coupled with thermal post-annealing treatment. The suitable annealing temperature was 500 °C. Surface photovoltaic spectroscopy showed that the photo voltage response of the film was very active in the wavelength range of visible light at different bias voltages. The as-prepared FeSe2 could serve as a potential photovoltaic absorber in solar cells.