Pulsed laser deposition of Cu2ZnSnS4 thin films from single quaternary sulfide target prepared by combustion method

• A presulfurization step is creatively used in combination with combustion method.
• Precursor layers composed of Cu-Zn-Sn-S and Cu-Zn-Sn-O are compared.
• The carrier concentration of CZTS is measured to be 2.4×1016 cm−3 by C-V method.
• The experiment process is common to other Cu-based kesterite solar cells.

In this study, a pulsed laser deposition process using single quaternary sulfide target to fabricate Cu2ZnSnS4 thin films was described. The mixed metal oxides powder prepared by combustion method was further utilized to fabricate quaternary CZTS target by adopting a presulfurization step. In addition, CZTO target directly made from combustion synthesized oxide powder was also fabricated as comparison to study the effects of precursor composition form on the grain growth and absorber/Mo interface properties. The carrier concentration of the annealed Cu2ZnSnS4 film was determined by capacitance-voltage measurement.