A novel low temperature active bonding of Si/Si with Sn3.5Ag4Ti(Ce,Ga) alloy filler

To reveal the effects of Titanium on active bonding between Sn3.5Ag4Ti(Ce,Ga) alloy filler and Silicon, the characteristics of the as-bonded Si/Si substrates and bonded Si/Si substrates aged at 190 °C for 720 h were investigated. The active element Ti is found to be segregated at the interface of Sn3.5Ag4Ti(Ce, Ga)/Si joint, and the TiSi and TiSi2 phases are identified to be formed discontinuously along the interface. Experiment results reveal that active element Ti plays an important role for obtaining reliable bonding at low temperature, and shear strength of the Si/Si joints meets the requirements of die or wafer bonding application.