Improved electrical properties of SiO2-added BaTiO3 ceramics by microwave sintering

• BT and SiO2 added ceramics were obtained by microwave sintering at low temperature.
• Pure BT ceramic showed very high dielectric constant (11022) at Curie point.
• Increasing SiO2 addition, Ba2TiSi2O8 was detected and columnar grains appeared.
• Improvement of densification and second phase were effective to improve the BDS.

SiO2 added BaTiO3 ceramics were successfully prepared by microwave sintering at low temperatures. Pure BT ceramic showed very high dielectric constant (11022) at Curie point. When SiO2 was 0.5 wt%, no second phase was detected and it showed homogeneous microstructure with small grains; however, with further increase of SiO2 addition to 1 and 2 wt%, Ba2TiSi2O8 was detected and columnar grains appeared. The improvement of densification and appearance of second phase were all effective to improve the electrical breakdown strengths and reached 46 kV/cm.

Figure optionsDownload as PowerPoint slide