Material characterisation and transistor function of quasi two dimensional sub-stoichiometric WO3−x nanoflakes

In this work, the morphology and properties of quasi two dimensional (Q2D) sub-stoichiometric tungsten oxide (WO3−x) fabricated by two step sol-gel-exfoliation-intercalation process are presented. After calcination and exfoliation, the resulting Q2D WO3 was observed to be comprised of large adjoining nanoflakes with dimensions of 50-120 nm and thickness as low as ~10 nm. After H+ intercalation, the field-effect-transistor (FET) based on Q2D WO3−x exhibited stable transistor function at room temperature with the biggest amplitude at the gate bias of VGS=2.0 V.