Ultra-high speed and low-power superlattice-like Sn18Sb82–SnSe2 thin films for phase change memory applications

• S18 film mainly contributes to quicken the phase-change speed of the film.
• S2 film can increase the stability and lower the power consumption of the film.
• [S18(2nm)-S2(10nm)]4 film shows the best properties.
• The highest Tc is 200 °C with better data retention capability (112 °C) than GST.
• The fastest phase-change speed of the film is 5 ns compared with 100 ns of GST.

Superlattice-like Sn18Sb82–SnSe2 multiple thin films are systematically investigated for phase change memory application. The thin films have a preferable thermal stability owing to the wide bandgap, strong Sn–Se bond energy and the vacancies and local distortions existed in SnSe2. Besides, the variation in resistance of the film not only can lower the power consumption but also can facilitate device operation. Meanwhile, operating speed of the device based on specific [Sn18Sb82(2 nm)–SnSe2(10 nm)]4 thin film is dramatically increased, reaching 5 ns compared with 100 ns of traditional Ge2Sb2Te5. This high operating speed is mainly derived from the precipitated Sb phase and weak Sb–Sb, Se–Se bonds.