Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs

• High-quality p-type nitrogen-doped ZnSe NRs were synthesized.
• ZnSe NR top-gate FETs show μh of 10.4 cm2 V−1 s−1, Vth of 1.9 V and Ion/Ioff of 106.
• Gate-control photoresponse show fast response speed and high Ilight/Idark ratio.

Nitrogen-doped p-type ZnSe nanoribbons (NRs) were successfully synthesized by a chemical vapor deposition (CVD) method. High-performance field-effect transistors (FETs) based on individual ZnSe NRs with high-κ Si3N4 dielectric and top-gate geometry were constructed. In contrast to the nano-FETs with back-gate configuration and SiO2 dielectric, the top-gate FETs exhibit a substantial improvement in device performances, such as threshold voltage was reduced to a small value of 1.9 V, the transconductance, hole mobility and Ion/Ioff ratio were increased to 864 nS, 10.4 cm2 V−1 s−1 and 106, respectively. Moreover, the top-gate ZnSe NR FET showed good controllability of photoresponse with fast response speed less than 0.1 s and high Ilight/Idark ratio up to 105, revealing that they are promising candidates for nano-electronic and optoelectronic applications.

High-performances ZnSe NR top-gate FETs were fabricated and studied, which show hole mobility of 10.4 cm2 V−1 s−1, threshold voltage of 1.9 V and Ion/Ioff ratio of 106. Gate-control photoresponse properties show fast response speed less than 0.1 s, and high Ilight/Idark ratio over 105.Figure optionsDownload as PowerPoint slide