کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1641908 | 1517224 | 2016 | 4 صفحه PDF | دانلود رایگان |
• p-CuO/n-ZnO thin film heterojunction has been fabricated by galvanic technique.
• Heterojunction exhibits excellent photocatalytic activity under visible light source.
• Various samples with various compositions show different degradation rate.
• Role of p−n heterojunction has been discussed to predict degradation mechanism.
• Heterojunction shows almost no loss in activity after four consecutive run.
We report the photocatalytic activity of p-CuO/n-ZnO thin film heterojunction fabricated by modifying our previously reported simple galvanic technique. The fabricated heterojunction exhibits excellent photocatalytic activity and re-usability towards degradation of three different dyes under visible light source. Various samples have been prepared with different compositions to interpret the degradation mechanism.
p-CuO/n-ZnO thin film heterojunction exhibits excellent visible light driven photocatalytic activity and re-usability towards degradation of dyes.Figure optionsDownload as PowerPoint slide
Journal: Materials Letters - Volume 164, 1 February 2016, Pages 221–224