Defects induced ferromagnetism in hydrogen irradiated 3C–SiC thin films

• Room-temperature ferromagnetism is observed in hydrogen ions irradiated 3C–SiC thin films.
• Plenty of silicon vacancies and divacancies are introduced by hydrogen ions irradiation.
• Ferromagnetism is attributed to silicon vacancies and divacancies.

3C–SiC thin films are irradiated by hydrogen ions and its magnetic properties are studied experimentally. The magnetic and structural properties are characterized before and after hydrogen ions irradiation. The magnetic characterizations show that hydrogen ions irradiated 3C–SiC thin films displays room-temperature ferromagnetic behaviors. Micro-Raman spectrum reveals that hydrogen ions irradiation doesn’t change the crystal polytype or cause secondary phase. Photoluminescence characterization indicates that the main defects are silicon vacancies and divacancies. The defect concentration is obviously increased after hydrogen ions irradiation. The observed ferromagnetism in 3C–SiC thin films is attributed to silicon vacancies and divacancies induced by hydrogen ions irradiation.