Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory

Bipolar resistive-switching (RS) memories were demonstrated based on an Ag/amorphous-carbon (a-C)/Pt sandwich structure. Here, the Ag-nanoclusters (NCs) were embedded into the a-C film via the sputtering deposition and thermal agglomeration. Versus the device without Ag-NCs, the embedding of the Ag-NCs in the a-C film favors the formation of incomplete Ag conducting filaments (CFs). This can act as tip electrodes for the RS. Therein, the local electric field can be enhanced and concentrated and lead to a simplified CF structure. Therefore, embedding Ag-NCs with a proper concentration into the electrolyte layer can effectively decrease the forming/switching voltages and improve the RS uniformity.