کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1642942 | 1517240 | 2015 | 4 صفحه PDF | دانلود رایگان |
• Three-dimensional (3D) nanodomes were fabricated by nano-imprint.
• 3D transparent conductor (TC) serves as a window layer of light.
• 3D TC window is an electrical conductor to improve carrier collection.
• 3D TC Si photodetector is highly-responsive for broad wavelength lights.
A high-performing photodetector was achieved by nanoscale three-dimensional (3D) structures. Optically transparent and electrically conductive indium–tin–oxide (ITO) was periodically patterned onto a Si substrate by a nano-imprint method. This 3D ITO nanodome structures serve as a window layer of photo-reactive Si semiconductor material. The ITO nanodome photodetector provided remarkably high photoresponses for broad wavelengths (λs) of light by 77588.45% at λ=400 nm, 162192% at λ=600 nm, and 5615.30% at λ=1100 nm. The ITO nanodome design is significantly effective to resolve the light-absorption limit of Si materials for short and long λs. We can suggest an efficient design scheme of Si-based photodetectors.
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Journal: Materials Letters - Volume 148, 1 June 2015, Pages 174–177