Facile synthesis of ultra-long Cu2CdSnS4 nanowires with wurtzite-derived structure

• Wurtzite structured Cu2CdSnS4 nanowires were synthesized by a solvothermal method.
• The structure and morphology of Cu2CdSnS4 nanowires were investigated.
• Optoelectronic properties of Cu2CdSnS4 nanowires were characterized.

A facile and inexpensive method was developed to synthesize high quality and ultra-long Cu2CdSnS4 (CCTS) nanowires. X-ray diffraction (XRD) and Raman spectra studies indicated that wurtzite structured CCTS was formed. The nanowires had diameters of 80–100 nm and lengths of up to several micrometers. The bandgap of CCTS nanowires was about 1.42 eV determined by UV–vis–NIR absorption spectrum. The photoresponses of CCTS nanowire thin films indicated that they were promising for use in photovoltaic applications.

STEM–EDS elemental mapping of as-synthesized CCTS nanowires (a). STEM–EDS elemental maps of CCTS nanowires: Cu (b), Cd (c), Sn (d), and S (e).Figure optionsDownload as PowerPoint slide