A novel nanostructured CuIn0.7Ga0.3(Se0.4Te0.6)2/SLG multinary compounds thin films: For photovoltaic applications

• CuIn0.7Ga0.3(Se0.4Te0.6)2 compound was obtained by e-beam after precursor-synthesize.
• Optical, electrical and surface properties were analyzed as not annealed and annealed.
• Such absorbers showed a strong temperature dependence as new PV materials.
• CuInGaSeTe offers reducing film formation temperatures so reduces manufacturing costs.

Investigation on chalcopyrite structures is crucial for making further progress in thin films technology. In this work we present the results on optical, electrical and surface properties of CuIn0.7Ga0.3(Se0.4Te0.6)2 (CIGSeTe) multinary compounds thin films with annealing effect. The developed procedure is a two-steps methodology involving the pre-reaction of high purity elements Cu, In, Ga, Se and Te in a carbon coated quartz ampoule and e-beam evaporation for thin film deposition. The availability of a multi-component absorber layers such as CuInGaSeTe, including all elements in a defined ratio, offers the opportunity to reduce film formation temperatures and thereby also reduce manufacturing costs. This aspect was a great motivation to evaluate these materials as banausic and new trend solar cell materials.