A yellow emitting phosphor Dy:Bi4Si3O12 crystal for LED application

• Dy-doped bismuth silicate (Bi4Si3O12, BSO) crystals were grown by the modified vertical Bridgeman method.
• These crystals could be excited by UV light and generates yellow light. The doping concentration quenching occurs when addition of Dy3+ reaches more than 1 mol%.
• Dy:Bi4Si3O12 is a highly yellow emitting crystal with potential application in yellow LEDs.

Dy-doped bismuth silicate (Bi4Si3O12, BSO) crystals were grown by the modified vertical Bridgman method. The luminescence properties for light emitting diode (LED) were investigated. Efficient energy transition from Bi ions to Dy ions has been established by photoluminescence investigation upon UV excitation and results in blue, yellow and red emissions at about 487 nm, 574 nm and 662 nm respectively. Photoluminescence intensity varies with excitation wavelength and the doping concentration of Dy3+, and Chromaticity coordinates does not changes distinctly. The samples exhibit stable yellow light by varying the relative concentration of Dy3+ and even when the excitation wavelengths changes from UV to n-UV. These results indicate that Dy:Bi4Si3O12 is a highly yellow emitting crystal with potential application in yellow LEDs.

This image shows that 1 mol% Dy doped Bi4Si3O12 crystal could generate stable yellow light when excited by 288, 323, 348, 363 and 390 nm. The intensity of the emission spectra of the crystal excited under 288 nm is much stronger than excited under other light.Figure optionsDownload as PowerPoint slide