Effects of Zr doping content on microstructure, ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin film

Ion-doping is a key factor affecting the microstructure and electrical properties of Na0.5Bi0.5TiO3 (NBT) thin film. In this paper, Na0.5Bi0.5(Ti1−xZrx)O3 (x=0, 0.01, 0.02, 0.04) thin films were prepared using chemical solution decomposition and the effects of Zr4+ doping content on crystalline, ferroelectric and dielectric properties were characterized. Compared with the other films, NBT with 2 mol% Zr4+ doping content exhibits enhanced ferroelectricity with a remanent polarization (Pr) of 12.3 μC/cm2 due to the high densification, as well as reduced leakage current and distortion of Ti-O octahedral. The dielectric constant (εr) and dissipation factor (tanδ) on frequency show small dispersion tendency with εr of 263 and tanδ of 0.067 at 100 kHz. Also, the capacitance-voltage curve displays a relatively sharp feature with a high dielectric tunability of 61.6%.