Synthesis and photoluminescence properties of red-emitting phosphors Ba2Gd8(SiO4)6O2:Eu3+

• Phosphors have relative better CIE chromaticity coordinates.
• Rietveld structural refinement shows two different sites for Eu3+ ions.
• Phosphors exhibit high quenching concentration.
• Critical transfer distance was calculated.

Red-emitting phosphors Ba2Gd8(SiO4)6O2:Eu3+ (BGS:Eu3+) with silicate apatite structure were prepared by the conventional high temperature solid state reaction method. Rietveld structural refinement based on X-ray diffraction data indicated that there are two different sites for Eu3+ occupying in the host. It was found that the phosphors BGS:Eu3+ exhibit red emission with high quenching concentration at ~70.75 at%, then the critical transfer distance of Eu3+ in BGS:Eu3+ was calculated to be ~12.3 Å. More importantly, it has better CIE chromaticity coordinate for white light-emitting diode (w-LED) application in comparison with the commercial phosphor (Y,Gd)BO3:Eu3+ (YGB:Eu3+) under near ultraviolet (n-UV) 393 nm excitation.

Strong red-emitting phosphor Ba2Gd8(SiO4)6O2:Eu3+ (BGS:Eu3+) has been obtained and this phosphor showed high quenching concentration and better CIE chromaticity coordinate for lighting and display applications.Figure optionsDownload as PowerPoint slide