Zirconium nitride polycrystalline films grown on Si (111) substrates by metal organic chemical vapor deposition

• TEMAZr was used as a new metal organic Zr precursor.
• MOCVD growth of polycrystalline ZrN films on Si (111) substrate.
• Growth temperature was optimized to achieve monoclinic phase ZrN.

Metal organic chemical vapor deposition growth of ZrxNy (111) films on silicon (111) substrate was presented with the help of a new metal organic Zr precursor. The effect of growth temperature on the film thickness, surface morphology and stoichiometry was systematically studied. The film thickness and surface roughness were found to reduce with increasing growth temperature. There is a phase transition from Zr3N4 to ZrN when the growth temperature was increased above 950 °C. Consequently, an optimum growth temperature for the monoclinic phase ZrN (111) film on Si (111) substrate was found to be 1050 °C.