Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography

• Fabrication of BiFeO3 nanodot via dip-pen nanolithography process.
• Characterizations of DPN-formed BiFeO3 nanodot by PFM and CAFM measurements.
• Ferroelectric response properties of DPN-formed BiFeO3 nanodot.
• Resistive switching properties of DPN-formed BiFeO3 nanodot.

We report the ferroelectric response and resistive switching characteristics of a BiFeO3 nanodot on a Nb-doped SrTiO3 substrate, prepared by elaborately controllable dip-pen nanolithography (DPN) process. By performing piezoresponse force microscopy (PFM) measurements, it is confirmed that the BiFeO3 nanodot exhibited good ferroelectric response and switching properties. More interestingly, based on current–voltage characterizations using a conducting atomic force microscope (CAFM) technique, we observed unipolar resistive switching behavior in the BiFeO3 nanodots. In addition, the bistable resistive switching characteristics were found to be reproducible with increasing the switching cycle up to 200 cycles, suggesting the future applicability for next generation RRAM memory devices.

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