کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1644660 1517272 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of working pressure on growth of Cu(In,Ga)Se2 thin film deposited by sputtering from a single quaternary target
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of working pressure on growth of Cu(In,Ga)Se2 thin film deposited by sputtering from a single quaternary target
چکیده انگلیسی


• CIGS thin films were deposited on soda lime glass (SLG) substrates by RF magnetron sputtering process from a single target.
• It has better crystalline quality of CIGS thin film deposited at lower working pressure.
• The rms roughness of the CIGS thin films decreases with the increasing of the working pressures which is related to the grain size of different thin films.

CIGS thin films were deposited on soda lime glass substrates by RF magnetron sputtering process from a single target at different working pressure. All CIGS thin films were deposited on heated substrates without post-selenization process. Energy dispersive X-ray results show CIGS thin films are Cu-poor state. The Cu content in the films decrease as the working pressure increased. The results of X-ray diffraction and Raman spectra analysis indicate that all CIGS thin films are the chalcopyrite-type structure and pure phase. It has better crystalline quality of CIGS thin film deposited at lower working pressure. However, the rms roughness of the CIGS thin films decreases with the increasing of the working pressures which is related to the grain size of different thin films. The grain size of thin films deposited at lower working pressure is larger. Further transmission spectra demonstrate the optical band gaps of all CIGS thin films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 116, 1 February 2014, Pages 75–78
نویسندگان
, , , , , , ,