Dielectric and ferroelectric properties of BaTi2O5 thin films prepared by sol–gel method

The BaTi2O5 thin films were prepared on Pt/Ti/SiO2/Si substrate by a sol–gel method. The effect of annealing temperature on microstructure, dielectric and ferroelectric properties of the BaTi2O5 thin films was investigated. The single-phase BaTi2O5 thin films were obtained, as the films were annealed at 700–850 °C. At higher annealing temperature (more than 900 °C), the Ba6Ti17O40 phase was formed with BaTi2O5 phase in the films. The BaTi2O5 thin film, which was annealed at 800 °C, had the better electrical properties with remnant polarization (2Pr) of 2.25 μC/cm2, coercive field (2Ec) of 113.4 kV/cm, dielectric constant (εr) of 55 and dielectric loss (tanδ) of 0.063 (at 1 MHz).

► The BaTi2O5 films were prepared on Pt/Ti/SiO2/Si substrate by sol–gel method.
► The BaTi2O5 film annealed at 800 °C had 2Pr of 1.12 μC/cm2 and 2Ec of 113.4 kV/cm.
► The BaTi2O5 film annealed at 800 °C had εr of 55 and tanδ of 0.063 (at 1 MHz).