Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

The effect of electric field on the growth and microstructure in doped amorphous silicon thin films during Ni induced lateral crystallization was investigated. With an applied electric field, n- and p-doped samples showed higher growth rate in the cathode and anode directions, respectively. The microstructure of the n- and p-doped samples showed bi-directional needle network and unidirectional-parallel structure, respectively. The reversal of the electric field effect in p-type doped sample was explained by employing charged vacancy migration. p-doped sample under an electric field can be useful for poly-Si TFT with its longer length, wider width, and higher growth rate.

► We examined the effect of electric field in doped amorphous silicon thin films.
► n-/p-doped samples showed higher growth rate in the cathode and anode directions.
► Microstructure and growth rate of the n-/p-doped samples were different.
► Electric field effect in p-type doped sample was reversed.
► Reversal of the e-field effect was explained by charged vacancy migration.