Nitrogen doping in cuprous oxide films synthesized by radical oxidation at low temperature

We study nitrogen (N) doping in cuprous oxide (Cu2O) films by radical oxidation of Cu films at low temperature (500 °C). The morphological, crystal, and optoelectronic properties of the Cu2O have been investigated by different N2 plasma treatment times. X-ray diffraction measurements show that Cu2O thin films grow on c-sapphire substrate with preferred (111) orientation. With increasing N2 plasma treatment time from 0 to 40 min, the optical bandgap energy is increased from 1.69 to 2.42 eV with p-type conductivity. From the Hall measurements, it is found that the hole density is increased from 1014 to 1015 cm−3 and the resistivity is decreased from 1879 to 780 Ω cm after N2 plasma treatment.

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► Oxidation of single Cu2O film at low temperature.
► First report on N-doping of Cu2O film by radical oxidation.
► Resistivity has a significant decrease and hole concentration increase to 1015 after N-doping.
► Bandgap has a significant blue-shift to 2.42 eV after N-doping.