کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1645909 1517291 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Close space vapor transport of gallium nitride in vacuum
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Close space vapor transport of gallium nitride in vacuum
چکیده انگلیسی

GaN synthesized by close space vapor transport in vacuum using GaN powder as the source material is reported. According to X-ray diffraction measurements, samples grown onto sapphire substrates are polycrystalline with the wurzite structure, while those grown onto fused silica substrates are amorphous. Scanning electron microscope and energy dispersive spectroscopy results show that the surface of the samples is composed of rounded droplets of GaN. Room temperature photoluminescence shows near band-edge emission and a broad defect band. Possible mechanisms allowing the deposition of GaN from the vapors of GaN powder are discussed.


► GaN compound was prepared using a CSVT configuration in vacuum.
► Catalytic effect of liquid gallium in the decomposition of the N2 molecules does not seem to explain the formation of GaN in these conditions.
► Intense luminescence in these GaN thin films was observable with the naked eye.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 96, 1 April 2013, Pages 34–37
نویسندگان
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