Temperature–Pressure‐Sintering (TPS) diagram approach for sintering of silicon

Temperature–(water vapor) Pressure‐Sintering (TPS) diagrams were established to control the microstructure evolution and densification during sintering of silicon. Experiments were performed under controlled humidified atmospheres and corroborated diagram predictions.

► Silica layer affects silicon particles sintering.
► The silica layer stability domain was calculated.
► Silicon sintering kinetics was estimated.
► Diagrams are used to control silica stability, microstructure and densification.