Structural evolution of Ge2Sb2Te5 films under the 488 nm laser irradiation

Ge2Sb2Te5 films were locally crystallized by a tightly focused laser beam and the structural evolution was studied by Raman scatting. The marks recorded by a broad range of laser power were studied by optical microscope. Raman spectra of films with irradiation power of 0.1 mW and 1 mW were consistent with those of films annealed at 140 °C and 400 °C, respectively. It reveals that both the cubic and hexagonal crystalline phases have been achieved under the irradiation of 488 nm laser in amorphous Ge2Sb2Te5 films. Specifically, the appearance of a new band of ∼141 cm−1 in films with irradiation power larger than 1.25 mW confirms that the over-irradiation causes the segregation of Te crystalline phase in films.

► Ge2Sb2Te5 films were locally crystallized by a tightly focused laser beam and the structural evolution was studied by Raman scatting.
► Both the cubic and hexagonal crystalline phases have been achieved under the irradiation of 488 nm laser and the two crystalline phases have been distinguished by Raman spectra comparison.
► Specifically, we also confirm that the over-irradiation causes the segregation of Te crystalline phase in films.