Comparative study on dry etching of α- and β-SiC nano-pillars

Different polytypes (α-SiC and β-SiC) and crystallographic orientations ((0001) and (11–20) of 6H-SiC) have been used in order to elaborate silicon carbide (SiC) nanopillars using the inductively coupled plasma etching method. The cross section of the SiC pillars shows a rhombus, pentagonal or hexagonal morphology depending on polytypes and crystallographic orientations. The favored morphologies of SiC nanopillars originate from a complex interplay between their polytypes and crystal orientations, which reflects the so-called Wulff′s rule.

► Different polytypes of SiC nanopillars fabricated by inductively coupled plasma etching.
► The rhombus pyramids shape of 3C-SiC pillars is for the first time reported.
► Crystal orientations and polytypes play key roles for the morphology of SiC nanopillars.