Characterization of β-Ga2O3 epitaxial films grown on MgO (111) substrates by metal-organic chemical vapor deposition

► β-Ga2O3 crystal epitaxial films have been prepared on MgO (111) substrates by MOCVD. ► The epitaxial relationship is β-Ga2O3 (2¯01) ‖ MgO(111) with β-Ga2O3 [010] ‖ MgO 〈110〉. ► Six-fold domain structure exists inside the film. ► The average transmittance of the films in the visible wavelength range exceeded 91%.