Advantages of Zn1.25Sb2Te3 material for phase change memory

The thermal and electrical properties of Zn1.25Sb2Te3 film have been investigated for phase change memory (PCM) applications. Compared with the conventional Ge2Sb2Te5, Zn1.25Sb2Te3 film exhibits a higher crystallization temperature (∼200 °C), greater activation energy (2.71 eV), and better data retention of 10 years at 105 °C. In addition, higher crystalline resistance and better resistance contrast are helpful to reduce RESET current and achieve a higher On/OFF ratio of PCM, respectively. Raman spectra of crystalline thin films suggests that the local bonding arrangement around Sb atoms changes; Sb2Te3 component is thus mainly responsible for the phase transition in Zn1.25Sb2Te3 alloys.

► Zn1.25Sb2Te3 thin film has better thermal stability.
► Zn1.25Sb2Te3 thin film has higher crystalline resistance.
► Zn1.25Sb2Te3 has a high amorphous/crystalline resistance ratio of about 105.
► Raman spectra suggests that the local bonding arrangement around Sb atoms changes.