Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 °C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor–Liquid–Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst.

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► For the first time, Si nanowires synthesized in vapor phase with Bi as a catalyst.
► The growth of Si nanowires has been taken at low substrate temperature 280°C.
► Growth of Si nanowires done by simple e-beam evaporation method.
► Si nanowires have shown good crystallinity with some Bi content in nanowires.